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(R)
T810-xxxB T835-xxxB
HIGH PERFORMANCE TRIACS
FEATURES ITRMS = 8 A SENSITIVE GATE : IGT 10mA and 35mA www..com HIGH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY
A2
DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay).
A2 A1
DPAK (Plastic)
G
ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM
2
Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I t value for fusing Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/s
2
Value Tc =110 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 8 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260
Unit A A A2s A/s
It dI/dt
Tstg Tj T
Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10 s
C C C
Symbol
Parameter
T810-/T835400B 600B 600
Unit
VDRM VRRM
Repetitive peak off-state voltage Tj = 125 C
400
V
May 1998 Ed : 1A
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T810-xxxB / T835-xxxB
THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Rth (j-a) Junction to case for DC Junction to case for AC 360 conduction angle ( F= 50 Hz) Junction to ambient (S = 0.5 cm2) Parameter Value 2.1 1.6 70 Unit C/W C/W C/W
GATE CHARACTERISTICS (maximum values)
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PG(AV) = 1 W
PGM= 10 W (tp = 20 s)
IGM = 4 A (tp = 20 s)
ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T810 IGT VGT VGD IL IH * VTM * IDRM IRRM dV/dt * VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k IG=1.2 IGT IT= 100mA gate open ITM= 11A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open Tj=25C Tj=25C Tj=125C Tj=25C Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C I-II-III I-II-III I-II-III I-II-III MAX MAX MIN MAX MAX MAX MAX MAX MIN 50 25 15 1.5 10 2 500 10 1.3 0.2 60 35 Suffix T835 35 mA V V mA mA V A mA V/s Unit
(dI/dt)c * (dV/dt)c = 0.1V/s (dV/dt)c = 15V/s
Tj=125C Tj=125C
MIN MIN
5.4 2.7
9 4.5
A/ms A/ms
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment
T 8 10 - 600
TRIAC VOLTAGE
B
CURRENT SENSITIVITY
PACKAGE B = DPAK
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T810-xxxB / T835-xxxB
Fig 1a: Maximum power dissipation versus RMS on-state current (T810 only).
10 8 6 4 2 www..com 0 0

180
Fig 1b: Maximum power dissipation versus RMS on-state current. (T835 only)
10 P(W)
P(W)

8 6 4 2

180
IT(RMS)(A) 1 2 3 4 5 6 7 8
0 0 1 2 3
IT(RMS)(A)
4 5 6 7 8
Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact.
Fig 3: RMS on-state current versus ambient temperature.
10 8 6
P(W)
Rth=10 C/W Rth=5C/W
Tcase (C)
110
Rth=0C/W
IT(RMS)(A) 9 8 7 6 5 4 3 2 1 0
115
Rth=15 C/W
4
120
2 0 0
Tamb(C) 25 50 75 100 125
125
Tamb(C) 0 25 50 75 100 125
Fig 4: Relative variation of thermal impedance junction to case versus pulse duration.
Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values).
2.5 2.0 IGT,IH[Tj]/IGT,IH[Tj=25C]
K=[Zth(j-c)/Rth(j-c)] 1.0
0.5
1.5 1.0
0.2
IGT IH
0.5
tp(s) 0.1 1E-3 1E-2 1E-1 1E+0
Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140
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T810-xxxB / T835-xxxB
Fig 6: Non repetitive surge peak on-state current versus number of cycles. Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
ITSM(A),It(As)
Tj initial=25C F=50Hz
80 70 60 50 40
ITSM(A)
500
Tj initial=25C
ITSM
100
It
www..com 30 20 10 0 1 Number of cycles 10 100 1000
tp(ms) 10 1 2 5 10
Fig 8: On-state characteristics (maximum values).
Fig 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W)
ITM(A) 100.0
Tj max.: Vto=0.8V Rt=60m
100 80 60
Tj=25C
10.0
Tj=Tj max.
40 20
1.0 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 0 2 4 6 S(Cu) (cm) 8 10 12 14 16 18 20
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T810-xxxB / T835-xxxB
PACKAGE MECHANICAL DATA DPAK Plastic REF. DIMENSIONS Millimeters Inches Min. Typ. Max Min. Typ. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 0.45 0.60 0.017 0.023 0.48 0.60 0.018 0.023 6.00 6.20 0.236 0.244 6.40 6.60 0.251 0.259 4.40 4.60 0.173 0.181 9.35 10.10 0.368 0.397 0.80 0.031 0.60 1.00 0.023 0.039 0 8 0 8
E B2 C2 L2
A
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D H L4 B G A1 C
A2 0.60 MIN.
V2
A A1 A2 B B2 C C2 D E G H L2 L4 V2
FOOT PRINT (millimeters)
6.7
WEIGHT : 0.30g MARKING
6.7
TYPE T810-400B
MARKING
T8 1040 T8 1060 T8 3540 T8 3560
6.7 3 1.6 2.3 2.3 1.6
T810-600B T835-400B T835-600B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
(c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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